Device characterization of Dy-incorporated HfO2 gate oxide nMOS device: Device characteristics and reliability of DyO/HfO gate dielectrics and the application to NAND Flash memory 59,00 EUR*

Details

  • Kategorie: Diverse Bücher
  • Preis: 59,00 EUR*
  • Lieferzeit: Versandfertig in 1 - 2 Werktagen
  • EAN: 9783844393422
  • Händler: Amazon.de
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